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| HGTG20N60C3D Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT used is development type TA49178. The diode used in anti-parallel with the IGBT is the RHRP3060 (TA49063). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49179. Features * 45A, 600V, TC = 25oC * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247 E C G Ordering Information PART NUMBER HGTG20N60C3D PACKAGE TO-247 BRAND G20N60C3D NOTE: When ordering, use the entire part number. Symbol C G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 (c)2001 Fairchild Semiconductor Corporation HGTG20N60C3D Rev. B HGTG20N60C3D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG20N60C3D Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 45 20 300 20 30 20A at 600V 164 1.32 -55 to 150 260 4 10 W W/oC oC oC UNITS V A A A V V 600 s s CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 10. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 3.4 VCE = 480V VCE = 600V 120 20 TYP 1.4 1.5 4.8 8.4 91 122 28 24 151 55 500 500 MAX 250 5.0 1.8 1.9 6.3 250 110 145 32 28 210 98 550 700 UNITS V A mA V V V nA A A V nC nC ns ns ns ns J J Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110 VGE = 15V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA VGE(TH) IGES SSOA IC = 250A, VCE = VGE VGE = 20V TJ = 150oC, RG = 10, VGE = 15V, L = 100H Gate to Emitter Plateau Voltage On-State Gate Charge VGEP QG(ON) ICE = IC110, VCE = 0.5 BVCES ICE = IC110 VCE = 0.5 BVCES VGE = 15V VGE = 20V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) td(ON)I trI td(OFF)I tfI EON EOFF IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 10 L = 1mH Test Circuit (Figure 19) (c)2001 Fairchild Semiconductor Corporation HGTG20N60C3D Rev. B HGTG20N60C3D Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON EOFF VEC trr IEC = 20A IEC = 20A, dIEC/dt = 200A/s IEC = 2A, dIEC/dt = 200A/s Thermal Resistance Junction To Case RJC IGBT Diode NOTES: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TEST CONDITIONS IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 10 L = 1mH Test Circuit (Figure 19) MIN TYP 28 24 280 108 1.0 1.2 1.5 32 MAX 32 28 450 210 1.1 1.7 1.9 55 47 0.76 1.2 UNITS ns ns ns ns mJ mJ V ns ns oC/W oC/W Typical Performance Curves 50 ICE , DC COLLECTOR CURRENT (A) Unless Otherwise Specified ICE , COLLECTOR TO EMITTER CURRENT (A) VGE = 15V 140 120 100 80 60 40 20 0 0 TJ = 150oC, RG = 10, VGE = 15V, L = 100H 40 30 20 10 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) 100 200 300 400 500 600 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 700 FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA (c)2001 Fairchild Semiconductor Corporation HGTG20N60C3D Rev. B HGTG20N60C3D Typical Performance Curves fMAX , OPERATING FREQUENCY (kHz) Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (s) 100 TC 75oC 75oC 110oC 110oC 10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 0.76oC/W, SEE NOTES 1 2 5 10 VGE 15V 10V 15V 10V VCE = 360V, RG = 10, TJ = 125oC ISC 12 10 8 6 4 2 400 350 300 250 200 150 tSC 10 11 12 13 14 15 20 40 ICE , COLLECTOR TO EMITTER CURRENT (A) VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME ICE , COLLECTOR TO EMITTER CURRENT (A) 100 ICE, COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE <0.5%, VGE = 10V PULSE DURATION = 250s 300 DUTY CYCLE <0.5%, VGE = 15V 250 200 150 TC = -55oC 100 50 0 TC = 150oC PULSE DURATION = 250s TC = 25oC 80 TC = -55oC 60 TC = 25oC oC TC = 150 40 20 0 0 2 4 6 8 10 0 1 2 3 4 5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 4.0 EON , TURN-ON ENERGY LOSS (mJ) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 EOFF, TURN-OFF ENERGY LOSS (mJ) RG = 10, L = 1mH, VCE = 480V 3.0 RG = 10, L = 1mH, VCE = 480V 2.5 2.0 TJ = 150oC; VGE = 10V OR 15V 1.5 1.0 0.5 0 TJ = 25oC; VGE = 10V OR 15V TJ = 25oC, TJ = 150oC, VGE = 10V TJ = 25oC, TJ = 150oC, VGE = 15V 5 10 15 20 30 35 25 ICE , COLLECTOR TO EMITTER CURRENT (A) 40 5 10 15 20 25 30 35 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT (c)2001 Fairchild Semiconductor Corporation HGTG20N60C3D Rev. B ISC , PEAK SHORT CIRCUIT CURRENT (A) 6 40 TJ = 150oC, RG = 10, L = 1mH, V CE = 480V 14 450 HGTG20N60C3D Typical Performance Curves 50 tdI , TURN-ON DELAY TIME (ns) 45 trI , RISE TIME (ns) 40 TJ = 25oC, TJ = 150oC, VGE = 10V 35 30 25 TJ = 25oC, TJ = 150oC, VGE = 15V 20 5 10 15 20 25 30 35 40 RG = 10, L = 1mH, VCE = 480V Unless Otherwise Specified (Continued) 200 RG = 10, L = 1mH, VCE = 480V 175 150 125 100 75 50 25 TJ = 25oC and TJ = 150oC, VGE = 15V 0 5 10 15 20 25 30 35 40 TJ = 25oC, TJ = 150oC, VGE = 10V ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 300 td(OFF)I , TURN-OFF DELAY TIME (ns) 275 RG = 10, L = 1mH, VCE = 480V 120 RG = 10, L = 1mH, VCE = 480V 110 tfI , FALL TIME (ns) 100 90 80 70 60 50 40 5 10 15 20 25 30 35 40 TJ = 25oC, VGE = 10V OR 15V TJ = 150oC, VGE = 10V OR VGE = 15V 250 225 200 175 150 125 100 5 10 15 20 25 30 35 40 TJ = 150oC, VGE = 10V, VGE = 15V TJ = 25oC, VGE = 10V, VGE = 15V ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT ICE , COLLECTOR TO EMITTER CURRENT (A) 300 VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250s 250 TC = -55oC 200 150 100 TC = 25oC 50 0 TC = 150oC 16 14 12 10 8 6 4 2 0 5 6 11 12 13 7 8 9 10 VGE , GATE TO EMITTER VOLTAGE (V) 14 15 0 IG (REF) = 1mA, RL = 15, TC = 25oC VCE = 600V VCE = 200V VCE = 400V 10 20 30 40 50 60 70 80 90 100 Qg, GATE CHARGE (nC) FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS (c)2001 Fairchild Semiconductor Corporation HGTG20N60C3D Rev. B HGTG20N60C3D Typical Performance Curves 5 FREQUENCY = 1MHz CIES 4 C, CAPACITANCE (nF) Unless Otherwise Specified (Continued) 3 2 COES 1 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ZJC , NORMALIZED THERMAL RESPONSE 100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 SINGLE PULSE DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-4 10-3 10-2 10-1 100 PD t2 101 t1 10-2 10-3 -5 10 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE 100 IEC , FORWARD CURRENT (A) 90 tr , RECOVERY TIMES (ns) 80 70 60 50 40 30 20 10 0 0 0.5 1.0 1.5 TC = 150oC 2.0 2.5 3.0 TC = 25oC TC = -55oC 45 40 35 30 25 20 15 10 5 0 TC = 25oC, dIEC/dt = 200A/s trr ta tb 5 10 15 20 25 30 VEC , FORWARD VOLTAGE (V) IEC , FORWARD CURRENT (A) FIGURE 17. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 18. RECOVERY TIMES vs FORWARD CURRENT (c)2001 Fairchild Semiconductor Corporation HGTG20N60C3D Rev. B HGTG20N60C3D Test Circuit and Waveforms HGTG20N60C3D 90% VGE EOFF L = 1mH RG = 10 + ICE VDD = 480V VCE 90% 10% td(OFF)I tfI trI td(ON)I 10% EON - FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 20. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 20. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (P C) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 20. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (I CE = 0). (c)2001 Fairchild Semiconductor Corporation HGTG20N60C3D Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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